On the Optoelectronic Mechanisms Ruling Ti?hyperdoped Si Photodiodes

This work deepens the understanding of optoelectronic mechanisms ruling hyperdoped-based photodevices and shows potential Ti hyperdoped-Si as a fully complementary metal-oxide semiconductor compatible material for room-temperature infrared photodetection technologies. By combination ion implantation laser-based methods, ?20 nm thin hyperdoped single-crystal Si layers with concentration high 1020 cm?3 are obtained. The Si/p-Si photodiode room temperature rectification factor at ±1 V 509. Analysis temperature-dependent current–voltage characteristics that transport is dominated by two mechanisms: tunnel mechanism low bias recombination process in space charge region bias. A sub-bandgap external quantum efficiency (EQE) extending to 2.5 µm wavelength Temperature-dependent spectral photoresponse behavior reveals an increase EQE decreases, showing low-energy edge 0.45 eV high-energy 0.67 eV. Temperature open-circuit voltage correlates edge. model proposed relate optical transitions involving impurity band. supported numerical device simulations using SCAPS software.